Analysis of the Data Stability and Leakage Power in the Various Sram Cells Topologies
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چکیده
Due to CMOS technology scaling and the need of battery operated devices continues to drive the increase of on-die memory density to meet performance needs in various applications. Meanwhile, the device variation and leakage are increasing as the miniaturization of the transistor continues which also effects the realiability and performance of the device. As a result, it is increasingly challenging to develop SRAM with adequate stability margin for low-voltage operation while keeping the power consumption low enough to meet system-level power requirements.In this paper we analyse the performance of various toplogies of SRAM cells at various process technologies for enhancing the cell stability which is related to the cell SNM and the leakage power consumption.
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تاریخ انتشار 2010